DC and Breakdown Characterization of InGaAs based on HEMTs
Keywords:
Breakdown Characterization; FET Logic Devices; HEMT; Indium Gallium Arsenide (InGaAs); Transconductance.Abstract
In this paper, we present a novel InGaAs HEMT for future 3-5 logic FETs. This work demonstrate
the potential of InGaAs HEMT (high electron mobility transistor).This device shows high drain current
Ids=0.7A/mm, transconductance Gm=0.00055 S/mm or 0.5 s/mm, ON_state Von=10v and OFF_state breakdown
voltage Voff of 20v by using TCAD sentaurus simulation. This feature make device suitable for high power and
breakdown application.
